Non-volatile memory device and method of manufacturing the same

ABSTRACT

A multi-layered non-volatile memory device and a method of manufacturing the same. The non-volatile memory device may include a plurality of first semiconductor layers having a stack structure. A plurality of control gate electrodes may extend across the first semiconductor layers. A first body contact layer may extend across the first semiconductor layers. A plurality of charge storage layers may be interposed between the control gate electrodes and the first semiconductor layers.

PRIORITY STATEMENT

This application claims the benefit of Korean Patent Application No.10-2008-0031365, filed on Apr. 3, 2008, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

1. Field

Example embodiments relate to a semiconductor device, for example, to anon-volatile memory device capable of recording and/or erasing data anda method of manufacturing the non-volatile memory device.

2. Description of the Related Art

Semiconductor products are demanded to be smaller and faster. As aresult, non-volatile memory devices used in semiconductor productsrequire a high level of integration and efficiency. Moreover, asintegration of non-volatile memory devices increase, distances betweenmemory cells of the non-volatile memory devices are reduced, therebypotentially causing increases in electrical interference betweenneighboring memory cells. Due to limitations of integration technology,general planar-type non-volatile memory devices have limited capacityand speed. Also, difficulty remains in reducing interference betweenneighboring memory cells.

In order to significantly increase integration of non-volatile memorydevices, a multi-layer stack structure has been suggested. For example,if a plurality of memory cells are stacked, a non-volatile memory devicewith larger capacity may be manufactured on the same footprint.

SUMMARY

According to example embodiments, there is provided a non-volatilememory device that may include a plurality of first semiconductor layershaving a stack structure, a plurality of control gate electrodesextending across the first semiconductor layers, a plurality of firstbody contact layers extending across the first semiconductor layers tocontact a surface of the first semiconductor layers opposite to thatfacing the control gate electrodes, and/or a plurality of charge storagelayers between the control gate electrodes and the first semiconductorlayers.

Example embodiments may further include a plurality of device isolatinglayers interposed between the first semiconductor layers and contactingthe first body contact layers.

According to example embodiments, a plurality of second semiconductorlayers may be disposed at a side of the control gate electrodes oppositeto that facing the first semiconductor layers.

According to example embodiments, a plurality of second body contactlayers, extending across the second semiconductor layers to contact asurface of the second semiconductor layers opposite to that facing thecontrol gate electrodes, may be provided.

According to example embodiments, a plurality of tunneling insulationlayers may be interposed between the charge storage layers and the firstand the second semiconductor layers, and a plurality of blockinginsulation layers may be interposed between the charge storage layersand/or the control gate electrodes.

According to example embodiments, the charge storage layers may bedisposed to surround the control gate electrodes, and/or the tunnelinginsulation layers may be connected to each other.

According to example embodiments, there is provided a non-volatilememory device including a cell array unit having a stack structurearranged in a plurality of layers, a row decoder connected to aplurality of wordlines in the cell array unit, an operating layerselecting unit connected to a plurality of bitlines in the cell arrayunit, and a page buffer connected to the bitlines via the operatinglayer selecting unit, wherein the operating layer selecting unitconnects only bitlines connected to one or more selected layers among aplurality of layers in the cell array unit to the page buffer.

The operating layer selecting unit may include a pre-charging unitcharging the bitlines with a boosting voltage in advance, and/or theoperating layer selecting unit may include a layer control unit forcontrolling electrical connections between the bitlines and the pagebuffer.

According to example embodiments, the operating layer selecting unit mayfurther include an even/odd selecting unit for distinguishing bitlinesdisposed on the same layer into even bitlines and/or odd bitlines.

According to example embodiments, there is provided a method ofmanufacturing a non-volatile memory device, the method may includeforming a plurality of first semiconductor layers having a stackstructure, forming a first body contact layer across the firstsemiconductor layers to connect the first semiconductor layers to eachother, forming a plurality of charge storage layers on sidewalls of thefirst semiconductor layers opposite to those contacting the first bodycontact layer, and/or forming a plurality of control gate electrodes toextend across the first semiconductor layers on the charge storagelayers.

The first semiconductor layers may be formed such that a plurality ofdevice isolating layers are interposed between the first semiconductorlayers. Furthermore, the first semiconductor layers may be formed usingan epitaxial lateral overgrowth (ELO) method such that the firstsemiconductor layers extend onto the device isolating layers.

According to example embodiments, a vertical epitaxial layer,perpendicular to the first semiconductor layers may be formed onsidewalls of the device isolating layers simultaneously to the formationof the first semiconductor layers. Furthermore, the control gateelectrodes may be formed in a trench formed by removing the verticalepitaxial layer.

According to example embodiments, a plurality of second semiconductorlayers may be formed at a side of the vertical epitaxial layer oppositeto that facing the first semiconductor layers prior to the formation ofthe charge storage layers.

According to example embodiments, the first body contact layer may bethe vertical epitaxial layer and the control gate electrodes may beformed to connect the first semiconductor layers opposite to thevertical epitaxial layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages will become more apparent bydescribing in detail example embodiments thereof with reference to theattached drawings in which:

FIG. 1 illustrates a non-volatile memory device according to exampleembodiments;

FIG. 2 is a top view of the non-volatile memory device of FIG. 1, takenalong a II-II′ line of FIG. 1;

FIG. 3 illustrates a non-volatile memory device according to exampleembodiments;

FIG. 4 is a cross-sectional view taken along a line IV-IV′ of FIG. 3;

FIG. 5 illustrates a non-volatile memory device according to exampleembodiments;

FIG. 6 is a cross-sectional view taken along a line VI-VI′ of FIG. 5;

FIG. 7 is an equivalent circuit diagram of a non-volatile memory deviceaccording to example embodiments;

FIGS. 8 through 15 illustrate a method of manufacturing a non-volatilememory device, according to example embodiments;

FIG. 16 is an example perspective view for explaining a method ofmanufacturing a non-volatile memory device, according to exampleembodiments;

FIG. 17 is a schematic block diagram illustrating a non-volatile memorydevice according to example embodiments;

FIG. 18 is a schematic block diagram illustrating an operating layerselecting unit in the non-volatile memory device of FIG. 17, accordingto example embodiments;

FIG. 19 is a circuit diagram illustrating an example of the operatinglayer selecting unit and a page buffer of the non-volatile memory deviceof FIG. 17, according to example embodiments;

FIG. 20 is a circuit diagram illustrating the operating layer selectingunit and the page buffer of the non-volatile memory device of FIG. 17,according example embodiments; and

FIG. 21 illustrates a non-volatile memory device according to exampleembodiments.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Example embodiments will now be described more fully with reference tothe accompanying drawings, in which example embodiments are shown.Example embodiments may, however, be embodied in many different formsand should not be construed as being limited to the example embodimentsset forth herein; rather, example embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey theconcept of the invention to those skilled in the art. Like referencenumerals in the drawings denote like elements, and thus, theirdescription may not be repeated.

Example embodiments of the present invention will be more clearlyunderstood from the detailed description taken in conjunction with theaccompanying drawings.

Various example embodiments of the present invention will now bedescribed more fully with reference to the accompanying drawings inwhich some example embodiments of the invention are shown. In thedrawings, the thicknesses of layers and regions may be exaggerated forclarity.

Detailed illustrative embodiments of the present invention are disclosedherein. However, specific structural and functional details disclosedherein are merely representative for purposes of describing exampleembodiments of the present invention. This invention may, however, maybe embodied in many alternate forms and should not be construed aslimited to only the embodiments set forth herein.

Accordingly, while example embodiments of the invention are capable ofvarious modifications and alternative forms, embodiments thereof areshown by way of example in the drawings and will herein be described indetail. It should be understood, however, that there is no intent tolimit example embodiments of the invention to the particular formsdisclosed, but on the contrary, example embodiments of the invention areto cover all modifications, equivalents, and alternatives falling withinthe scope of the invention. Like numbers refer to like elementsthroughout the description of the figures.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of example embodiments of thepresent invention. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between”, “adjacent” versus “directlyadjacent”, etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments of the invention. As used herein, the singular forms “a”,“an” and “the” are intended to include the plural forms as well, unlessthe context clearly indicates otherwise. It will be further understoodthat the terms “comprises”, “comprising,”, “includes” and/or“including”, when used herein, specify the presence of stated features,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,integers, steps, operations, elements, components, and/or groupsthereof.

It should also be noted that in some alternative implementations, thefunctions/acts noted may occur out of the order noted in the FIGS. Forexample, two FIGS. shown in succession may in fact be executedsubstantially concurrently or may sometimes be executed in the reverseorder, depending upon the functionality/acts involved.

Also, the use of the words “compound,” “compounds,” or “compound(s),”refer to either a single compound or to a plurality of compounds. Thesewords are used to denote one or more compounds but may also justindicate a single compound.

Now, in order to more specifically describe example embodiments of thepresent invention, various embodiments of the present invention will bedescribed in detail with reference to the attached drawings. However,the present invention is not limited to the example embodiments, but maybe embodied in various forms. In the figures, if a layer is formed onanother layer or a substrate, it means that the layer is directly formedon another layer or a substrate, or that a third layer is interposedtherebetween. In the following description, the same reference numeralsdenote the same elements.

Although the example embodiments of the present invention have beendisclosed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims.

FIG. 1 illustrates a non-volatile memory device according to exampleembodiments, and FIG. 2 is a top view of the non-volatile memory deviceof FIG. 1, taken along a II-II′ line of FIG. 1.

Referring to FIGS. 1 and 2, a plurality of first semiconductor layers105 a and/or a plurality of second semiconductor layers 105 b may be ina stacked structure. The first semiconductor layers 105 a and/or thesecond semiconductor layers 105 b may be provided as single crystallayers, and more particularly, epitaxial layers grown on a singlecrystal substrate, for example. Stack structures of the firstsemiconductor layers 105 a and stack structures of the secondsemiconductor layers 105 b may be disposed alternately. Alternatively,either the stack structures of the first semiconductor layers 105 a orthe stack structures of the second semiconductor layers 105 b may beomitted. Also, any number of the first semiconductor layers 105 a and/orthe second semiconductor layers 105 b can be stacked in thecorresponding stack structures. Thus, the number of stacked layers arenot limited in example embodiments.

The first semiconductor layers 105 a and/or the second semiconductorlayers 105 b may be formed of a suitable semiconductor material; i.e.silicon, germanium, or silicon germanium. However, example embodimentsare not limited thereto. For example, the first semiconductor layers 105a and the second semiconductor layers 105 b may be formed of the samesemiconductor material.

The first semiconductor layers 105 a may be stacked by alternatelyinterposing a plurality of device isolating layers 110 therebetween,and/or the second semiconductor layers 105 b may be stacked byalternately interposing a plurality of the device isolating layers 110therebetween. The device isolating layers 110 may be formed of asuitable insulating material, and example embodiments may not be limitedto the insulation material.

A plurality of control gate electrodes 165 may be provided such that thecontrol gate electrodes 165 extend across the first semiconductor layers105 a and/or the second semiconductor layers 105 b. For example, thecontrol gate electrodes 165 may be arranged in a plurality of verticalpenetration structures between the first semiconductor layers 105 a andthe second semiconductor layers 105 b. In this case, the control gateelectrodes 165 may be coupled with the first semiconductor layers 105 aand the second semiconductor layers 105 b in a NAND-type structure.However, example embodiments are not limited thereto, and thearrangement of the control gate electrodes 165 may vary.

One or more first body contact layers 135 a may be provided to connect asurface of the first semiconductor layers 105 a opposite to that facingthe control gate electrodes 165, and/or one or more second body contactlayers 135 b may be provided to connect a surface of the secondsemiconductor layers 105 b opposite to that facing the control gateelectrodes 165. For example, the one or more first body contact layers135 a may extend across the first semiconductor layers 105 a, and theone or more second body contact layers 135 b may extend across thesecond semiconductor layers 105 b.

The one or more first body contact layers 135 a may be provided to applybody bias to the first semiconductor layers 105 a, and the one or moresecond body contact layers 135 b may be provided to apply body bias tothe second semiconductor layers 105 b. The one or more first bodycontact layers 135 a and the one or more second body contact layers 135b may be formed of a conductive material. For example, the one or morefirst body contact layers 135 a and the one or more second body contactlayers 135 b may be formed of the same material. Also, the first and thesecond body contact layers 135 a and 135 b may be either formed of thesame material as the first and the second semiconductor layers 105 a and105 b or formed of a material different from that of the first and thesecond semiconductor layers 105 a and 105 b.

Sidewalls of the device isolating layers 110 may contact the first bodycontact layer 135 a and the second body contact layer 135 b.Accordingly, the device isolating layers 110 may be disposed between thecontrol gate electrodes 165 and the first and the second body contactlayers 135 a and 135 b respectively.

A plurality of charge storage layers 155 a may be interposed between thefirst semiconductor layers 105 a and the control gate electrodes 165and/or between the second semiconductor layers 105 b and the controlgate electrodes 165. The charge storage layers 155 a may be used as acharge storage medium for data programming. Accordingly, the chargestorage layers 155 a may be floating-gate type charge storage layers ora charge-trapping type charge storage layers.

For example, the floating-gate type charge storage layers may include aconductor such as poly-silicon layers, whereas the charge-trapping typecharge storage layers may include silicon-nitride layers, quantum dots,or nanocrystals. The quantum dots or the nanocrystals may be formed offine particles of a conductor such as a metal or a semiconductor. Thecharge-trapping type charge storage layers can locally store charges,and thus the charge-trapping type charge storage layers can be used formulti-bit operation of a non-volatile memory device.

A plurality of tunnelling insulation layers 150 a may be interposedbetween the first semiconductor layers 105 a and the charge storagelayers 155 a and/or the second semiconductor layers 105 b and the chargestorage layers 155 a. A plurality of blocking insulation layers 160 amay be interposed between the charge storage layers 155 a and thecontrol gate electrodes 165. The tunnelling insulation layers 150 a andthe blocking insulation layers 160 a may be formed of suitableinsulation materials such as oxides, nitrides, or high dielectricmaterials. The tunnelling insulation layers 150 a and the blockinginsulation layers 160 a may also include structures in which a pluralityof the insulation materials are stacked.

In the non-volatile memory device according to example embodiments, thecontrol gate electrodes 165 can be combined with the first semiconductorlayers 105 a and/or the second semiconductor layers 105 b to form memorycells. Thus, the memory cells formed in both cases can be arranged ineither a multi-layer structure or a stack structure while sharing thecontrol gate electrodes 165. Accordingly, the integration of thenon-volatile memory device may be improved by increasing the number ofstacked layers of the first semiconductor layers 105 a and/or the secondsemiconductor layers 105 b. Thus, the non-volatile memory deviceaccording to example embodiments may have a higher capacity. Moreover,body bias may be applied to the first and the second semiconductorlayers 105 a and 105 b having stack structures by using the first andthe second body contact layers 135 a and 135 b. The body bias may beused for controlling threshold voltages of memory cells or for erasingdata of memory cells simultaneously. Therefore, the non-volatile memorydevice according to example embodiments may exhibit a high level ofperformance.

FIG. 3 illustrates a non-volatile memory device according to exampleembodiments, and FIG. 4 is a cross-sectional view taken along a lineIV-IV′ of FIG. 3. The non-volatile memory device illustrated in FIGS. 3and 4 may have similar features as the non-volatile memory deviceillustrated in FIGS. 1 and 2. Accordingly, descriptions of similarfeatures are not provided here.

Referring to FIGS. 3 and 4, charge storage layers 155 are not limited tosidewalls of the control gate electrodes 165 between first and thesecond semiconductor layers 105 a and 105 b, and thus can extend alongthe first and the second semiconductor layers 105 a and 105 b and can beconnected to each other. In this case, for example, the charge storagelayers 155 may be charge-trapping type charge storage layers. Therefore,although the charge storage layers 155 are connected to each other, thecharge storage layers 155 may also be operated independently of memorycells.

FIG. 5 illustrates an example non-volatile memory device according toexample embodiments and FIG. 6 is a cross-sectional view taken along aline VI-VI′ of FIG. 5.

Referring to FIGS. 5 and 6, a plurality of first semiconductor layers205 a and/or a plurality of second semiconductor layers 205 b may beprovided in stack structures. The first semiconductor layers 205 a maybe stacked by alternately interposing a plurality of device isolatinglayers 210 therebetween, and the second semiconductor layers 205 b maybe stacked by alternately interposing a plurality of device isolatinglayers 210 therebetween. The first and the second semiconductor layers205 a and 205 b are similar to the first and the second semiconductorlayers 105 a and 105 b of FIGS. 1 and 2, and the device isolating layers210 are similar to the device isolating layers 110 of FIGS. 1 and 2.Therefore, descriptions of example embodiments are not provided here.

For example, a plurality of control gate electrodes 265 may be providedsuch that the control gate electrodes 265 extend perpendicular to thefirst semiconductor layers 205 a and/or the second semiconductor layers205 b. The control gate electrodes 265 may be provided in a verticalpenetration structure, and the first and the second semiconductor layers205 a and 205 b may be provided to surround sidewalls of the controlgate electrodes 265 such that they are disposed on opposite sides of thecontrol gate electrodes 265. The control gate electrodes 265 may have acylindrical shape, but example embodiments are not limited thereto.Moreover, the control gate electrodes 265 may be coupled with the firstsemiconductor layers 205 a and the second semiconductor layers 205 b ina NAND-type structure.

One or more first body contact layers 235 a may be provided to contactand connect a surface of the first semiconductor layers 205 a oppositeto that facing the control gate electrodes 265, and/or one or moresecond body contact layers 235 b may be provided to contact and connecta surface of the second semiconductor layers 205 b opposite to thatfacing the control gate electrodes 265. Sidewalls of the deviceisolating layers 210 may contact the first body contact layers 235 a andthe second body contact layers 235 b. The first and the second bodycontact layers 235 a and 235 b are similar to the first and the secondbody contact layers 135 a and 135 b of FIGS. 1 and 2. Thus, detaileddescriptions of example embodiments are not provided here.

A plurality of charge storage layers 255 may be interposed between thefirst semiconductor layers 205 a and the control gate electrodes 265and/or between the second semiconductor layers 205 b and the controlgate electrodes 265. For example, the charge storage layers 255 may bedisposed to surround the control gate electrodes 265. In exampleembodiments, the charge storage layers 255 may be shared by memory cellsincluding the first semiconductor layers 205 a and the secondsemiconductor layers 205 b. Thus, for example, the charge storage layers255 may be charge-trapping type charge storage layers.

A plurality of tunnelling insulation layers 250 may be interposedbetween the first semiconductor layers 205 a and the charge storagelayers 255 and/or between the second semiconductor layers 205 b and thecharge storage layers 255. A plurality of blocking insulation layers 260may be interposed between the charge storage layers 255 and the controlgate electrodes 265. For example, the tunnelling insulation layers 250and the blocking insulation layers 260 may be disposed to surround thecontrol gate electrodes 265.

The tunnelling insulation layers 250 may be disposed to be connected toeach other between the first semiconductor layers 205 a and the secondsemiconductor layers 205 b. For example, two of the tunnellinginsulation layers 250 adjacent to each other may be connected as well.Accordingly, the tunnelling insulation layers 250 may insulate betweenthe first semiconductor layers 205 a and the second semiconductor layers205 b. In this case, for example, radial shaped electric fields of twoof the control gate electrodes 265 adjacent to each other overlap, andthus it may not be necessary to form source/drain regions using P-Njunctions in the first and the second semiconductor layers 205 a and 205b.

The non-volatile memory device according to example embodiments mayinclude the advantages of the non-volatile memory device illustrated inFIGS. 1 and 2. Moreover, source/drain regions may be omitted in thefirst and the second semiconductor layers 205 a and 205 b in thenon-volatile memory device according to example embodiments. Therefore,the non-volatile memory device may be highly integrated.

FIG. 7 is an example equivalent circuit diagram of a non-volatile memorydevice according to example embodiments.

Referring to FIG. 7, an example of a NAND-type non-volatile memorydevice having a four-layered stack structure is shown. Bitlines BL14 andBL24 may be connected in two rows to memory transistors T_(M) disposedon a first layer. Bitlines BL23 and BL13 may be connected in two rows tomemory transistors T_(M) disposed on a second layer. Bitlines BL22 andBL12 may be connected in two rows to memory transistors T_(M) disposedon a third layer. Bitlines BL21 and BL11 may be connected in two rows tomemory transistors T_(M) disposed on a fourth layer. Although the stackstructure illustrated in FIG. 7 may include four layers, exampleembodiments are not limited thereto. Thus, number of layers in the stackstructure may be chosen according to the intended storage capacity ofthe non-volatile memory device.

Wordlines WL1, WL2, and WL3 may be disposed such that memory transistorsT_(M) disposed on the same row of each of the layers are connected toone of the wordlines WL1, WL2, and WL3 in common. A string selectingline SSL may be connected to a string selecting transistor T_(SS) ofeach of the layers in common, and a ground selecting line GSL may beconnected to a ground selecting transistor T_(GS) of each of the layersin common. Although the number of wordlines, WL1, WL2, and WL3, and thenumber of memory transistors, T_(M,) is three respectively, exampleembodiments are not limited thereto.

Table 1 shows operating conditions of the non-volatile memory deviceaccording to the example embodiments.

TABLE 1 Program Read Erase SSL V_(cc) V_(re) F/T SEL_WL V_(pgm) V_(read)0 V USL_WL V_(pass) V_(on) 0 V GSL 0 V V_(cc) F/T SEL_BL 0 V 1.0 V F/TUSL_BL V_(cc)   0 V F/T Bulk 0 V   0 V V_(ers)

For example, a selected bitline SEL_BL may refer to a bitline selectedfrom the bitlines BL11, BL21, BL12, BL22, BL13, BL23, BL14, and BL24,whereas unselected bitlines USL_BL may refer to the residual bitlinesexcept the selected bitlines. For example, a selected wordline SEL_WLrefers to a wordline selected from the wordlines WL1, WL2, and WL3,whereas unselected wordlines USL_WL, may refer to the residual bitlinesexcept the selected wordlines. A bulk Bulk refers to bodies of thememory cells T_(M), which may be the first and the second body contactlayers 135 a, 135 b, 235 a, and 235 b of FIGS. 1 through 6.

A programming operation may be performed by applying a programmingvoltage V_(pgm) to the selected wordline SEL_WL and applying a passingvoltage V_(pass) to the unselected wordlines USL_WL. In this case, forexample, an operating voltage V_(cc) may be applied to the stringselecting line SSL and the unselected bitlines USL_BL, and 0V may beapplied to the ground selecting line GSL, the selected bitlines SEL_BL,and the bulk Bulk.

A reading operation may be performed by applying a reading voltageV_(read) to the selected wordline SEL_WL and applying a second passingvoltage V_(on) to the unselected wordlines USL_WL. In this case, forexample, the operating voltage V_(cc) may be applied to the groundselecting line GSL, 0V may be applied to the unselected bitlines USL_BLand the bulk Bulk, and a second operating voltage V_(re) may be appliedto the selected bitlines SEL_BL.

An erasing operation may be performed by applying 0V to the selectedwordline SEL_WL and the unselected wordlines USL_WL and applying anerasing voltage V_(ers) to the bulk Bulk. In this case, for example, thestring selecting line SSL, the ground selecting line GSL, the selectedwordline SEL_WL, and the unselected wordlines USL_WL may be floated(indicated as F/T). FIG. 21 illustrates a non-volatile memory deviceaccording to example embodiments.

Referring to FIG. 21, the structures of non-volatile memory devicesaccording to example embodiments, such as the non-volatile memory devicein FIG. 1 may be formed on a substrate 101. For example, the substrate101 may include a semiconductor wafer made of semiconductor materials,such as Si, Ge or Si—Ge, etc. The first and second semiconductor layers105 a and 105 b may be vertically stacked on the substrate 101. Thecontrol gate electrodes 165 may extend vertically on the substrate 101to across the first and second semiconductor layers 105 a and 105 b. Thefirst and second body contact layers 135 a and 135 b may extendvertically on the substrate 101 to across the first and secondsemiconductor layers 105 a and 105 b. For example, a insulating layer102 may be provided between the control gate electrodes 165 and thesemiconductor substrate 101 and between the first and second bodycontact layers 135 a and 135 b and the semiconductor substrate 101.

FIGS. 8 through 15 are example perspective views illustrating a methodof manufacturing a non-volatile memory device, according to exampleembodiments.

Referring to FIG. 8, device isolating layers 110 may be patterned on asemiconductor layer 105 such that a trench 115 may be formed exposing aportion of the semiconductor layer 105 between the device isolatinglayers 110. For example, the device isolating layers 110 may be formedby forming a suitable insulation layer (not shown) on the semiconductorlayer 105 and patterning the insulation layer using a photolithographyand/or an etching technique or any other known technique. Although onlyone trench 115 is illustrated in FIG. 8, example embodiments are notlimited thereto, and a plurality of trenches may be successively formed.

The semiconductor layer 105 may be a portion of a substrate or anepitaxial layer. In example embodiments, an epitaxial layer, forexample, may refer to a single crystal layer conformally grown from alower single crystal layer.

Referring to FIG. 9, a vertical connecting layer 120 may be formed inthe trench 115. For example, the vertical connecting layer 120 may be anepitaxial layer grown from the semiconductor layer 105. As stated above,because the number of trenches formed may not be limited, a plurality ofvertical connecting layers may be disposed on the semiconductor layer105. The vertical connecting layer 120 may be formed of the samematerial as the semiconductor layer 105 or a material having a latticeconstant similar to that of a material forming the semiconductor layer105. For example, silicon and silicon-germanium have lattice constantssimilar to each other, and thus one of them may grow as an epitaxiallayer from the other.

Referring to FIG. 9 again, another portion of the semiconductor layer105 may be formed over the vertical connecting layer 120. Thesemiconductor layer 105 may be formed using an epitaxial lateralovergrowth (ELO) method. For example, the semiconductor layer 105 may beformed as an epitaxial layer growing upward from the vertical connectinglayer 120 and sideward onto the device isolating layers 110.

An example vertical connecting layer 120 and the semiconductor layer 105may be grown into an epitaxial layer at the same instance.

Referring to FIG. 10, further device isolating layers 110 may be formedon the semiconductor layer 105.

Referring to FIG. 11, another portion of the vertical connecting layer120 may be formed on a portion of the semiconductor layer 105 exposedbetween the device isolating layers 110.

Referring to FIG. 12, another portion of the semiconductor layer 105 maybe formed on the vertical connecting layer 120 by using an ELO method. Avertical epitaxial layer 122 may refer to portions, including thevertical connecting layers 120, grown perpendicular to the semiconductorlayer 105. Only one vertical epitaxial layer 122 is illustrated in FIG.12, but example embodiments are not limited thereto, and a plurality ofvertical epitaxial layers 122 may be disposed.

Referring to FIG. 13, trenches 130 may be formed at both sides of thevertical epitaxial layer 122. The trenches 130 may be formed bypatterning the semiconductor layers 105 and the device isolating layers110 by using a photolithography and/or an etching technique. Firstsemiconductor layers 105 a and second semiconductor layers 105 b may besimultaneously formed, for example, on either side of the trenches 130.

Referring to FIG. 14, first and second body contact layers 135 a and 135b may be formed in the respective trenches 130, and the verticalepitaxial layer 122 may be selectively removed. For example, the firstbody contact layers 135 a may be formed perpendicular to the firstsemiconductor layers 105 a such that the first semiconductor layers 105a are connected to each other. The second body contact layers 135 b maybe formed perpendicular to the second semiconductor layers 105 b suchthat the second semiconductor layers 105 b may be connected to eachother. The first and the second body contact layers 135 a and 135 b maybe formed as conductive layers including a metal, a metal-silicide, or adoped semiconductor material.

The vertical epitaxial layer 122 may be removed using a photolithographyand/or an etching technique. For example, as the vertical epitaxiallayer 122 may be removed, a trench 137 may be formed between sidewallsof the first and the second semiconductor layers 105 a and 105 bopposite to the first and the second body contact layers 135 a and 135 b

The removal of the vertical epitaxial layer 122 and the formation of thefirst and the second body contact layers 135 a and 135 b may beperformed in any sequence.

Referring to FIG. 15, tunnelling insulation layers 150 may be formed onsidewalls of the first and the second semiconductor layers 105 a and 105b in the trench 137, charge storage layers 155 may be formed on thetunnelling insulation layers 150, and blocking insulation layers 160 maybe formed on the charge storage layers 155. Furthermore, control gateelectrodes 165 may be formed on the blocking insulation layers 160. Forexample, the control gate electrodes 165 may be formed by forming aconductive layer on the blocking insulation layers 160 to fill thetrench 137 and patterning the conductive layer.

According to example embodiments, as shown in FIG. 1 for example, thetunnelling insulation layers 150, the charge storage layers 155, and theblocking insulation layers 160 may be patterned together when thecontrol gate electrodes 165 are being patterned.

According to the method of example embodiments, first and second bodycontact layers 135 a and 135 b may be formed together with the first andthe second semiconductor layers 105 a and 105 b. Moreover, becausesidewalls of the first and the second semiconductor layers 105 a and 105b facing the control gate electrodes 165 may be formed in the beginningof the epitaxial lateral overgrowth, the sidewalls of the first and thesecond semiconductor layers 105 a and 105 b facing the control gateelectrodes 165 may be used as a high-quality channel region.

FIG. 16 is a perspective view, for example, explaining a method ofmanufacturing a non-volatile memory device, according to exampleembodiments. Example embodiments may be a modification of the methodillustrated in FIGS. 8 through 15. Thus, descriptions overlapping theseexample embodiments are not provided in the description of the methodreferring to FIG. 16. Furthermore, steps illustrated in FIG. 16 may beperformed after steps illustrated in FIG. 13.

Referring to FIG. 16, the tunnelling insulation layers 150, the chargestorage layers 155, the blocking insulation layers 160, and the controlgate electrodes 165 may be formed in the trenches 130, as illustrated inFIG. 15. In this case, for example, the vertical epitaxial layer 122 ofFIG. 13 may be equal to the first body contact layer 135 a or the secondbody contact layer 135 b. As illustrated in FIG. 12, if a plurality ofvertical epitaxial layers are disposed, the vertical epitaxial layersmay become a repeating structure of the first and the second bodycontact layers 135 a and 135 b.

FIG. 17 is a schematic block diagram illustrating a non-volatile memorydevice according to example embodiments.

Referring to FIG. 17, the non-volatile memory device according toexample embodiments may include a cell array unit 410, a row decoder420, an operating layer selecting unit 430, a page buffer 440, and acontrol logic unit 450. The cell array unit 410 may have a stackstructure of memory cells. For example, the cell array unit 410 mayinclude one of the non-volatile memory device shown in FIGS. 1 through16 and 21 or array structure thereof.

The row decoder 420 may be connected to wordlines of the cell array unit410, and the operating layer selecting unit 430 may be connected tobitlines of the cell array unit 410. The page buffer 440 may beconnected to the bitlines of the cell array unit 410 via the operatinglayer selecting unit 430. The operating layer selecting unit 430 mayfunction to connect bitlines connected to selected layers in the stackstructure of the cell array unit 410 to the page buffer 440. The controllogic unit 450 may control the row decoder 420 and the page buffer 440.

FIG. 18 is a schematic block diagram illustrating the operating layerselecting unit 430 in the non-volatile memory device of FIG. 17,according to example embodiments.

Referring to FIG. 18, the operating layer selecting unit 430 may includea pre-charging unit 432, a layer control unit 434, and/or an even/oddselecting unit 436. The pre-charging unit 432 may charge the bitlines ofthe cell array region 410 to a boosting voltage. The layer control unit434 may control electrical connections between the bitlines of the cellarray unit 410 and the page buffer 440. The even/odd selecting unit 436may be provided between the layer control unit 434 and the page buffer440, and is capable of distinguishing bitlines disposed on the samelayer into even bitlines and odd bitlines.

FIG. 19 is a circuit diagram illustrating an example of the operatinglayer selecting unit 430 and the page buffer 440 of the non-volatilememory device of FIG. 17, according to example embodiments.

Referring to FIGS. 18 and 19, the pre-charging unit 432 may include aplurality of first transistors T_(PC) connected between bitlines BLe1,BLe2, BLe3, BLe4, BLo1, BLo2, BLo3, and BLo4 and a power supply sourceand a pre-charging line PRE for controlling the first transistorsT_(PC). When a turn-on voltage is applied to the pre-charging line PRE,the first transistors T_(PC) are turned on, and the bitlines BLe1, BLe2,BLe3, BLe4, BLo1, BLo2, BLo3, and BLo4 may be charged by a boostingvoltage Vcc. The number of the bitlines BLe1, BLe2, BLe3, BLe4, BLo1,BLo2, BLo3, and BLo4 illustrated in FIG. 19 is an example, and thus thenumber of bitlines may vary according to the intended or desiredcapacity of the non-volatile memory device.

The layer control unit 434 may include a plurality of second transistorsT_(LS1), T_(LS2), T_(LS3), and T_(LS4) and a plurality of layerselecting lines LSL1, LSL2, LSL3, and LSL4. The second transistorT_(LS1) may be interconnected between the bitlines BLe1 and Blo1 and thepage buffer 440, and may be controlled by the layer selecting line LSL1.The second transistor T_(LS2) may be interconnected between the bitlinesBLe2 and Blo2 and the page buffer 440, and may be controlled by thelayer selecting line LSL2. The second transistor T_(LS3) may beinterconnected between the bitlines BLe3 and Blo3 and the page buffer440, and may be controlled by the layer selecting line LSL3. The secondtransistor T_(LS4) may be interconnected between the bitlines BLe4 andBlo4 and the page buffer 440, and may be controlled by the layerselecting line LSL4.

The even/odd selecting unit 436 may include third transistors T_(OS) andT_(ES), an odd selecting line BLoSL, and an even selecting ling BLesL.The third transistor T_(OS) may be connected between the secondtransistors T_(LS1), T_(LS2), T_(LS3), and T_(LS4) and the page buffer440, and may be controlled by the odd selecting line BLoSL. The thirdtransistor T_(ES) may be connected between the second transistorsT_(LS1), T_(LS2), T_(LS3), and T_(LS4) and the page buffer 440, and maybe controlled by the even selecting line BLeSL.

According to example embodiments, the bitlines BLe1, BLe2, BLe3, BLe4,BLo1, BLo2, BLo3, and BLo4 can be first charged with the boostingvoltage Vcc by using the pre-charging unit 432. One of the secondtransistors T_(LS1), T_(LS2), T_(LS3), and T_(LS4) corresponding to theselected layer may be turned on by using the layer selecting unit 434 toconnect the selected bitline to the page buffer 440. Accordingly, theselected bitline may be discharged. Therefore, only selected bitlinesmay be programmed.

FIG. 20 is a circuit diagram illustrating the operating layer selectingunit 430 and the page buffer 440 of the non-volatile memory device ofFIG. 17, according to example embodiments.

Referring to FIG. 20, bitlines BL1, BL2, BL3, and BL4 may be combinedwith the page buffer 440. Therefore, the even/odd selecting unit 436 maybe omitted in this case.

While example embodiments have been particularly shown and describedwith reference to FIGS. 1-20, it will be understood by those of ordinaryskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of example embodiments asdefined by the following claims.

1. A non-volatile memory device comprising: a plurality of firstsemiconductor layers having a stack structure; a plurality of controlgate electrodes extending across the first semiconductor layers; aplurality of first body contact layers extending across the firstsemiconductor layers to contact a surface of the first semiconductorlayers facing opposite to the control gate electrodes; and a pluralityof charge storage layers between the control gate electrodes and thefirst semiconductor layers.
 2. The non-volatile memory device of claim1, further comprising a plurality of device isolating layers interposedbetween the first semiconductor layers and contacting the first bodycontact layers.
 3. The non-volatile memory device of claim 1, whereinthe charge storage layers extend along the first semiconductor layers.4. The non-volatile memory device of claim 1, further comprising aplurality of second semiconductor layers disposed at a side of thecontrol gate electrodes facing opposite to the first semiconductorlayers.
 5. The non-volatile memory device of claim 4, further comprisinga plurality of device isolating layers interposed between the secondsemiconductor layers and contacting a plurality of second body contactlayers.
 6. The non-volatile memory device of claim 4, further comprisinga plurality of second body contact layers extending across the secondsemiconductor layers to contact a surface of the second semiconductorlayers facing opposite to the control gate electrodes.
 7. Thenon-volatile memory device of claim 4, further comprising: a pluralityof tunneling insulation layers interposed between the charge storagelayers and the first and the second semiconductor layers; and aplurality of blocking insulation layers interposed between the chargestorage layers and the control gate electrodes.
 8. The non-volatilememory device of claim 7, wherein the charge storage layers are disposedto surround the control gate electrodes.
 9. The non-volatile memorydevice of claim 8, wherein the tunneling insulation layers extend alongthe first semiconductor layers.